npn TIP130 ? 131 ? 132 30/10/2012 comset semiconductors 1/3 09/11/2012 semiconductors silicon darlington power transistors npn epitaxial-base transistors in a monolithic dalrington circuit and housed in a to-220 enveloppe. they are intented for use in power linear and switching applications. the complementary pnp types are tip135/136/137 compliance to rohs. absolute maximum ratings symbol ratings value unit v cbo collector-base voltage (i e = 0) TIP130 60 v tip131 80 tip132 100 v ceo collector-emitter voltage (i b = 0) TIP130 60 v tip131 80 tip132 100 v ebo emitter-base voltage (i c = 0) 5 v i c collector current 8 a i cm collector peak current (1) 12 a i b base current 0.3 a p t power dissipation t case @ t mb < 25 70 w t amb 2 t j junction temperature 150 c t s storage temperature range -65 to +150 thermal characteristics symbol ratings value unit r thjc from junction to case thermal resistance 1.78 c/w r thja from junction to free-air thermal resistance 62.5 http://www..net/ datasheet pdf - http://www..net/
npn TIP130 ? 131 ? 132 30/10/2012 comset semiconductors 2/3 09/11/2012 semiconductors electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit v ceo collector-emitter breakdown voltage (*) i c = 30 ma i b = 0 TIP130 60 - - v tip131 80 - - tip132 100 - - i cbo collector-emitter sustaining current v cb = v ceo i e = 0 TIP130 - - 0.2 ma tip131 - - 0.2 tip132 - - 0.2 v cb = v ceo i e = 0 t c =100c TIP130 - - 1 tip131 - - 1 tip132 - - 1 i ceo collector-emitter cutoff current v ce = 30 v TIP130 - - 0.5 a v ce = 40 v tip131 - - 0.5 v ce = 50 v tip132 - - 0.5 i ebo emitter cutoff current v eb = 5 v i c = 0 - - 5 ma v ce(sat) collector-emitter saturation voltage (*) i c = 4a i b = 16 ma - - 2 v i c = 6 a i b = 30 ma - - 3 v be base-emitter voltage (*) v ce = 4 v i c = 4 a - - 2.5 v h fe forward current transfer ratio (*) v ce = 4 v i c = 1 a 500 - - - v ce = 4 v i c = 4 a 1000 - 1500 0 c obo output capacitance v cb =10 v i e =0 - - 200 pf (*) pulse width 300 s, duty cycle 2.0% http://www..net/ datasheet pdf - http://www..net/
npn TIP130 ? 131 ? 132 30/10/2012 comset semiconductors 3/3 09/11/2012 semiconductors mechanical data case to-220 dimensions (mm) min. max. a 9,90 10,30 b 15,65 15,90 c 13,20 13,40 d 6,45 6,65 e 4,30 4,50 f 2,70 3,15 g 2,60 3,00 h 15,75 17.15 l 1,15 1,40 m 3,50 3,70 n - 1,37 p 0,46 0,55 r 2,50 2,70 s 4,98 5,08 t 2.49 2.54 u 0,70 0,90 revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com pin 1 : base pin 2 : collector pin 3 : emitter case : collector http://www..net/ datasheet pdf - http://www..net/
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